| 发明名称 |
COMPOSITION FOR FORMING N-TYPE DIFFUSION LAYER, METHOD FOR PRODUCING SEMICONDUCTOR SUBSTRATE HAVING N-TYPE DIFFUSION LAYER, AND METHOD FOR PRODUCING SOLAR CELL ELEMENT |
| 摘要 |
<p>The invention provides composition for forming an n-type diffusion layer, the composition comprising a compound containing a donor element, a dispersing medium, and an organic filler; a method for producing a semiconductor substrate having an n-type diffusion layer; and a method for producing a photovoltaic cell element.</p> |
| 申请公布号 |
KR20140117585(A) |
申请公布日期 |
2014.10.07 |
| 申请号 |
KR20147023321 |
申请日期 |
2013.01.10 |
| 申请人 |
HITACHI CHEMICAL COMPANY, LTD. |
发明人 |
SATO TETSUYA;YOSHIDA MASATO;NOJIRI TAKESHI;ASHIZAWA TORANOSUKE;KURATA YASUSHI;MACHII YOICHI;IWAMURO MITSUNORI;ORITA AKIHIRO;SHIMIZU MARI |
| 分类号 |
H01L31/04;C03C8/16;C08L101/00;C09D201/00;H01L21/225;H01L31/18 |
主分类号 |
H01L31/04 |
| 代理机构 |
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