发明名称 Electro-optical device and electronic device
摘要 An object of the present invention is to provide an EL display device having a high operation performance and reliability.;The switching TFT 201 formed within a pixel has a multi-gate structure, which is a structure which imposes an importance on reduction of OFF current value. Further, the current control TFT 202 has a channel width wider than that of the switching TFT to make a structure appropriate for flowing electric current. Morever, the LDD region 33 of the current control TFT 202 is formed so as to overlap a portion of the gate electrode 35 to make a structure which imposes importance on prevention of hot carrier injection and reduction of OFF current value.
申请公布号 US8853696(B1) 申请公布日期 2014.10.07
申请号 US200009578895 申请日期 2000.05.26
申请人 Semiconductor Energy Laboratory Co., Ltd. 发明人 Yamazaki Shunpei;Koyama Jun;Yamamoto Kunitaka;Konuma Toshimitsu
分类号 H01L31/0376 主分类号 H01L31/0376
代理机构 Nixon Peabody LLP 代理人 Nixon Peabody LLP ;Costellia Jeffrey L.
主权项 1. An electroluminescence display device comprising: a substrate; and a plurality of pixels over the substrate, each of the plurality of pixels comprising: a first thin film transistor;a second thin film transistor comprising at least two thin film transistors; andan electroluminescence element comprising an organic layer interposed between a pair of electrodes, wherein one of the pair of electrodes is electrically connected to the second thin film transistor, wherein the first thin film transistor comprises at least two channel regions in an active layer, at least two gate electrodes corresponding to the channel regions, over the active layer with a gate insulating film interposed therebetween, and an impurity region interposed between the channel regions, and wherein the at least two thin film transistors and the electroluminescence element are connected in series.
地址 Kanagawa-ken JP