发明名称 Surface emitting laser device, surface emitting laser array, optical scanning device, image forming apparatus, and manufacturing method of surface emitting laser device
摘要 A disclosed surface emitting laser device includes a light emitting section having a mesa structure where a lower reflection mirror, an oscillation structure, and an upper reflection mirror are laminated on a substrate, the oscillation structure including an active layer, the upper reflection mirror including a current confined structure where an oxide surrounds a current passage region, a first dielectric film that coats the entire surface of an emitting region of the light emitting section, the transparent dielectric including a part where the refractive index is relatively high and a part where the refractive index is relatively low, and a second dielectric film that coats a peripheral part on the upper surface of the mesa structure. Further, the dielectric film includes a lower dielectric film and an upper dielectric film, and the lower dielectric film is coated with the upper dielectric film.
申请公布号 US8855162(B2) 申请公布日期 2014.10.07
申请号 US201313915921 申请日期 2013.06.12
申请人 Ricoh Company, Ltd. 发明人 Shouji Hiroyoshi;Sato Shunichi
分类号 H01S5/00;H01S5/183;B41J2/47;H01S5/32;H01S5/42 主分类号 H01S5/00
代理机构 Cooper & Dunham LLP 代理人 Cooper & Dunham LLP
主权项 1. A method of manufacturing a surface emitting device including a mesa structure which becomes a light emitting section in a laminated body where a lower reflection mirror, an oscillation structure, and an upper reflection mirror are laminated on a substrate, the oscillation structure including an active layer, the upper reflection mirror including a current confined structure, and an emitting region including a part where the refractive index is relatively high and a part where the refractive index is relatively low, the method comprising: forming a first dielectric film on an upper surface of the laminated body before the mesa structure is formed; forming a first resist pattern on an upper surface of the first dielectric film, the first resist pattern including a pattern defining an outer shape of the mesa structure and a pattern protecting a region corresponding to the part where the refractive index is relatively high in the emitting region; etching the first dielectric layer using the first resist pattern as an etching mask; forming a second resist pattern protecting a region corresponding to an entirety of the emitting region; forming the mesa structure; forming the current confined structure; and forming a second dielectric film on an upper surface of the laminated body where the current confined structure is formed, the second dielectric film being formed at a wet etching rate lower than the wet etching rate of the first dielectric film.
地址 Tokyo JP
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