发明名称 MEMS devices and fabrication thereof
摘要 A MEMS device and method, comprising: a substrate; a beam; and a cavity located therebetween; the beam comprising a first beam layer and a second beam layer, the first beam layer being directly adjacent to the cavity, the second beam layer being directly adjacent to the first beam layer; the first beam layer comprising a metal or a metal alloy containing silicon; and the second beam layer comprising a metal or a metal alloy substantially not containing silicon. Preferably the second beam layer is thicker than the first beam layer e.g. at least five times thicker, and the first beam layer comprises a metal or alloy containing between 1% and 2% of silicon. The second beam layer provides desired mechanical and/or optical properties while the first beam layer prevents spiking.
申请公布号 US8853797(B2) 申请公布日期 2014.10.07
申请号 US200912990123 申请日期 2009.05.06
申请人 NXP, B.V 发明人 van Schaijk Robertus T. F.
分类号 H01L27/12;B81B3/00 主分类号 H01L27/12
代理机构 代理人
主权项 1. A MEMS device, comprising: a silicon substrate; a beam; and a cavity; the cavity being located between the silicon substrate and the beam; wherein the beam includes a first beam layer and a second beam layer, the first beam layer being directly adjacent to the cavity, the second beam layer being directly adjacent to the first beam layer; the first beam layer includes silicon dissolved in a metal layer and is configured and arranged to use the silicon to mitigate spiking of silicon from an adjacent layer upon contact between the first beam layer and the adjacent layer, wherein the first beam layer is formed by co-depositing silicon and metal simultaneously onto the silicon substrate; and the second beam layer includes a metal alloy.
地址 Eindhoven NL