发明名称 MEMS devices and methods of forming the same
摘要 A device includes a substrate, a routing conductive line over the substrate, a dielectric layer over the routing conductive line, and an etch stop layer over the dielectric layer. A Micro-Electro-Mechanical System (MEMS) device has a portion over the etch stop layer. A contact plug penetrates through the etch stop layer and the dielectric layer. The contact plug connects the portion of the MEMS device to the routing conductive line. An escort ring is disposed over the etch stop layer and under the MEMS device, wherein the escort ring encircles the contact plug.
申请公布号 US8853801(B2) 申请公布日期 2014.10.07
申请号 US201213450728 申请日期 2012.04.19
申请人 Taiwan Semiconductor Manufacturing Company, Ltd. 发明人 Tsai Shang-Ying;Peng Jung-Huei;Huang Hsin-Ting;Huang Yao-Te;Pan Lung Yuan;Lin Hung-Hua
分类号 H01L29/788 主分类号 H01L29/788
代理机构 Slater and Matsil, L.L.P. 代理人 Slater and Matsil, L.L.P.
主权项 1. A device comprising: a substrate; a routing conductive line over the substrate; a dielectric layer over the routing conductive line; an etch stop layer over the dielectric layer; a Micro-Electro-Mechanical System (MEMS) device comprising a portion over the etch stop layer; a contact plug penetrating through the etch stop layer and the dielectric layer, wherein the contact plug connects the portion of the MEMS device to the routing conductive line; an escort ring over the etch stop layer and under the MEMS device, wherein the escort ring encircles the contact plug; and a conductive component, wherein the conductive component forms a lower capacitor plate of the MEMS device, and wherein the conductive component and the escort ring are formed of a same material, and are at substantially a same level.
地址 Hsin-Chu TW