发明名称 Mask frame assembly for thin layer deposition and organic light emitting display device
摘要 A mask frame assembly for thin film deposition is disclosed. In one embodiment, the assembly includes: a frame, and a plurality of unit mask strips attached to the frame, wherein each of the unit mask strips includes a plurality of unit masking patterns which are spaced apart from each other. In one embodiment, each of the unit masking patterns includes: i) a plurality of stripe pattern slits and ii) a plurality of sets of dot pattern slits each set formed to be substantially parallel with the stripe pattern slits. Further, the stripe pattern slits and the sets of dot pattern slits are alternately formed with respect to each other, wherein each set of the dot pattern slits includes a plurality of dot pattern slits, and wherein the length of each stripe pattern slit is substantially the same as the length of each set of the dot pattern slits.
申请公布号 US8852346(B2) 申请公布日期 2014.10.07
申请号 US201012973597 申请日期 2010.12.20
申请人 Samsung Display Co., Ltd. 发明人 Lee Sang-Shin
分类号 C23C16/50;C23C16/00;C23F1/00;H01L21/306;C23C14/04;H01L51/00;H01L27/32;H01L51/56 主分类号 C23C16/50
代理机构 Knobbe, Martens, Olson & Bear, LLP 代理人 Knobbe, Martens, Olson & Bear, LLP
主权项 1. A mask frame assembly for thin film deposition comprising: a frame, wherein an opening is defined in the frame; and a plurality of unit mask strips which extend in a first direction to be substantially parallel with each other and attached to the frame such that the unit mask strips cross the opening of the frame, wherein each of the unit mask strips comprises a plurality of unit masking patterns which are spaced apart from each other and extend in a second direction substantially perpendicular to the first direction, wherein each of the unit masking patterns comprises: i) a plurality of stripe pattern slits each of which extends in the second direction and ii) a plurality of sets of dot pattern slits each set formed to be substantially parallel with the stripe pattern slits, wherein the stripe pattern slits and the sets of dot pattern slits are alternately formed with respect to each other, wherein each set of the dot pattern slits comprises a plurality of dot pattern slits, wherein the length of each stripe pattern slit is substantially the same as the length of each set of the dot pattern slits, wherein at least one of the stripe pattern slits is disposed in the leftmost and rightmost ends of each unit masking pattern, wherein the at least one stripe pattern slit is continuously formed, and wherein more than two sets of the dot pattern slits are formed between adjacent stripe pattern slits.
地址 Gyeonggi-do KR