发明名称 FILM DEPOSITION APPARATUS, FILM DEPOSITION METHOD, AND FILM DEPOSITION PROGRAM
摘要 PROBLEM TO BE SOLVED: To provide a film deposition apparatus, a film deposition method, and a film deposition program that can make uniform film characteristics, such as a film thickness and film hardness, of a coating formed on a surface of a material to be processed.SOLUTION: A film deposition apparatus includes: a microwave supply part which supplies a microwave for generating plasma along a processing surface of a conductive material to be processed; a negative voltage application part which applies the material to be processed with a negative bias voltage for expanding a sheath layer along the processing surface of the material to be processed; and a control part which controls the microwave supply part and negative voltage application part. The microwave supply part has a microwave supply opening which propagates the microwave to be supplied to the expanded sheath layer, and the control part controls the microwave supply part and negative voltage application part so as to change a sheath thickness of the sheath layer during the supply of the microwave.
申请公布号 JP2014189899(A) 申请公布日期 2014.10.06
申请号 JP20130069712 申请日期 2013.03.28
申请人 BROTHER IND LTD;NAGOYA UNIV 发明人 TAKI KAZUYA;SHINODA KENTARO;KANEDA HIDEKI;KAMISAKA HIROYUKI;TAKAOKA YASUYUKI
分类号 C23C16/511;H05H1/46 主分类号 C23C16/511
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