| 摘要 |
Disclosed are a light emitting device capable of improving light emitting efficiency and a method of manufacturing the same. The light emitting device includes a p-type semiconductor layer, an active layer, an n-type semiconductor layer, a p-type electrode, and an n-type electrode. The active layer is formed in the upper part of the p-type semiconductor layer. The n-type semiconductor layer is formed in the upper part of the active layer. The p-type electrode supplies holes to the p-type semiconductor layer. The n-type electrode supplies electrons to the n-type semiconductor layer. At this time, the center part of the lower surface of the n-type electrode is convex. Therefore, because the center part of the lower surface of the n-type electrode is convex, beams entering the lower surface of the n-type electrode are reflected to a lateral part, and light extraction efficiency can be increased by reflecting the beams again. |
