| 摘要 |
PROBLEM TO BE SOLVED: To improve a defect detection rate without rotating a silicon wafer under transportation.SOLUTION: A defect inspection device for a silicon wafer includes: a transportation unit 10 which transports a silicon wafer 80; a first infrared irradiation unit 20 which irradiates, with infrared ray, an area along a line 21 forming +45° with a transport direction P on a lower surface 81 of the silicon wafer when the transported silicon wafer 80 passes a first position 21; a first imaging unit 40 which images scattering transmitted light or normally transmitted light of the infrared light emitted from the first infrared irradiation unit 20 and transmitted through the silicon wafer 80; a second infrared irradiation unit 30 which irradiates, with infrared light, an area along a line 31 forming -45° with the transport direction P on the lower surface 81 of the silicon wafer when the transported silicon wafer 80 passes a second position 31; and a second imaging unit 50 which images scattering transmitted light or normally transmitted light of the infrared light emitted from the second infrared irradiation unit 30 and transmitted through the silicon wafer 80. |
