| 摘要 |
PROBLEM TO BE SOLVED: To suppress etching in a lateral direction of a tungsten layer in plasma processing method.SOLUTION: A plasma processing method includes: a first etching step S2 of generating plasma by supplying a process gas containing a fluorine-containing gas to a processing container 12 and etching a tungsten layer W from an upper surface to a lower surface of the tungsten layer; an oxidation processing step S3 of generating plasma by supplying a process gas containing an oxygen-containing gas to the processing container 12 and processing the tungsten layer W; and a second etching step S4 of generating plasma by supplying the process gas containing the fluorine-containing gas to the processing container 12 and etching the tungsten layer W to the lower surface of the tungsten layer W. |
