| 摘要 |
PROBLEM TO BE SOLVED: To reduce parasitic capacitance between a gate electrode and a drain electrode, as well as, between the gate electrode and a source electrode, and to shorten a channel length.SOLUTION: A semiconductor device includes an insulating substrate, a gate electrode layer formed on a surface of the insulating substrate, a first insulating layer formed on the gate electrode layer, an oxide semiconductor layer which is formed on the first insulating layer and formed to stride over the gate electrode layer, a second insulation layer formed on the oxide semiconductor layer, and a drain electrode layer and a source electrode layer which are electrically connected to the oxide semiconductor layer and are arranged to face each other across the gate electrode layer when viewed from above. The second insulating layer includes exposure regions in which at least end parts in extension direction of the oxide semiconductor layer are respectively exposed. In the oxide semiconductor layer, a channel region is formed in a region between a pair of exposure regions. The drain electrode layer and the source electrode layer are connected to the oxide semiconductor layer in the exposure region, and a connection portion does not overlap with the gate electrode layer. |
