SEMICONDUCTOR DEVICE MANUFACTURING METHOD, SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS

摘要

PROBLEM TO BE SOLVED: To provide an art of depositing a non-doped Si film having excellent uniformity in wafer in-plane film thickness and excellent uniformity in wafer inter-wafer surface film thickness.SOLUTION: A semiconductor device manufacturing method comprises: a process of transporting a substrate to a processing chamber; a first gas supply process of supplying a B-atom containing gas into the processing chamber; a first purge process of purging the inside of the processing chamber under an atmosphere of the B-atom containing gas supplied in the first gas supply process; a second gas supply process of supplying an Si-atom containing gas into the processing chamber after the first purge process to form a non-doped Si film on the substrate; and a second purge process of purging the inside of the processing chamber under an Si-atom containing gas atmosphere.