发明名称 |
SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SEMICONDUCTOR SUBSTRATE MANUFACTURING METHOD |
摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device having an alignment mark capable of being used in a manufacturing process.SOLUTION: A semiconductor device manufacturing method comprises: a process S1 of preparing an SOI substrate 1 having a first region A1 and a second region A2; a process S2 of forming an alignment mark M in the second region A2; a process S3 of etching the second region A2 to form a level difference D; a process S4 of forming a second substrate 21; a process S7 of bonding the second substrate 21 to the SOI substrate 1 to form a third substrate 29; a process S8 of removing a wafer 22 from the third substrate 29 to form a fourth substrate 33; and a process S9 of removing an epitaxial layer 23 on the second region A2 from the fourth substrate 33 to form a semiconductor substrate 34. |
申请公布号 |
JP2014192233(A) |
申请公布日期 |
2014.10.06 |
申请号 |
JP20130064526 |
申请日期 |
2013.03.26 |
申请人 |
SUMITOMO ELECTRIC IND LTD |
发明人 |
KITAMURA TAKAMITSU;FURUYA AKIRA |
分类号 |
H01L21/02;H01L21/027 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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