| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a semiconductor device that simultaneously suppresses an increase in on-resistance and a decrease in breakdown voltage.SOLUTION: The semiconductor device comprises: a first semiconductor layer which is formed on a substrate and made of a nitride-based semiconductor; a second semiconductor layer formed on a surface of the first semiconductor layer and made of a nitride-based semiconductor having a wider bandgap than the first semiconductor layer; a protective film formed on a surface of the second semiconductor layer and made of an insulator; a first electrode formed on the second semiconductor layer; and a second electrode which is in contact with the surface of the second semiconductor layer. Carriers are generated at an interface of the first semiconductor layer with the second semiconductor layer. At least in the first electrode right under a side end portion of the second electrode, the first semiconductor layer has a first region and a second region, in a second direction crossing a first direction extending from the first electrode to the second electrode. The density of the carriers in the first region is at a predetermined value, and the carrier density in the second region is lower than the predetermined value.</p> |
