发明名称 DENSE COMPOSITE MATERIAL, METHOD FOR MANUFACTURING THE SAME, JOINED BODY, AND MEMBER FOR SEMICONDUCTOR MANUFACTURING APPARATUSES
摘要 <p>Provided is a composite material having extremely little difference in coefficient of linear thermal expansion with aluminum nitrate, and having sufficient high thermal conductivity, density, and strength. The dense composite material of the present invention contains silicon carbide, titanium silicon carbide, and titanium carbide which are contained in highest contents in order of content, contains 51-68 wt% of silicon carbide, does not contain titanium silicide, and has open pore ratio of 1% or less. The properties of the dense composite material, for example, has average coefficient of linear thermal expansion at 40-570°C of 5.4-6.0 ppm/K, thermal conductivity of 100 W/m·K or more, and four-point bending strength of 300 MPa or more.</p>
申请公布号 KR20140116817(A) 申请公布日期 2014.10.06
申请号 KR20140033510 申请日期 2014.03.21
申请人 NGK INSULATORS, LTD. 发明人 JINDO ASUMI;INOUE KATSUHIRO;KATSUDA YUJI
分类号 C04B35/565 主分类号 C04B35/565
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