| 摘要 |
The present invention relates to an epiwafer testing device and an epiwafer testing method, which are applied to a microelectronic device such as an LED and, more specifically, to an epiwafer testing device and an epiwafer testing method capable of enabling a test on an optical property or electrical property of an epiwafer by applying a current without damage to the epiwafer. The test method of the epiwafer (100), including a sapphire substrate (110), an n-gallium nitride (n-GaN) layer (120), a multi-quantum well layer (130), and a p-gallium nitride (p-GaN) layer (140), tests the electrical and optical properties of the epiwafer (100) by detecting light emitted from a light emitting layer (130) by applying a current between a negative probe (10) connected to the n-gallium nitride (n-GaN) layer (120) and at least one positive probe (20) connected to the p-gallium nitride (p-GaN) layer (140). |
