| 摘要 |
A method for forming surface patterns of a sapphire substrate includes the steps of: forming an insulation layer for a first etch mask on the sapphire substrate; coating a layer for a second etch mask on the insulation layer; forming a plurality of patterns by pressurizing the layer for the second etch mask by a copy mold applying a nano-imprint technology; exposing a sapphire substrate at the outside of the remaining insulation layer while remaining the insulation layer at only the lower portion of the pattern by removing the exposed insulation layer of the outside of the pattern using the pattern as the second etch mask; exposing the remaining insulation layer by removing the pattern; forming a surface pattern of a three-dimensional structure by etching the sapphire substrate of the outside of the remaining insulation layer using the remaining insulation layer as the first etch mask; and forming a final surface pattern of the three-dimensional structure by completely etching the remaining insulation layer. |
