| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a group III nitride semiconductor crystal capable of manufacturing a group III nitride semiconductor crystal having excellent crystallinity and easiness in peeling a growth substrate, a manufacturing method of a GaN substrate, and an etching method of a group III nitride semiconductor.SOLUTION: A mask layer 140 made of AlX InY Ga(1-X-Y)N(0<X,0≤Y,X+Y≤1) is formed on a GaN substrate G11 which is a growth substrate. After a plurality of concavities are formed so as to reach the GaN substrate G11 from the mask layer 140, the facet surface is exposed to the concavity by etching in Na melt having a concentration of the group III metal of 5 mol% or less to form a seed crystal T11. The seed crystal T11 and a raw material are put in a crucible and then pressure and temperature are raised. A GaN layer 150 thus grows in the lateral direction and upward direction from the surface 144 of the mask layer 140 and the concavity becomes an amorphous part X13 that is not covered by the GaN layer 150. |
