| 摘要 |
PROBLEM TO BE SOLVED: To provide a terminal structure for an electronic device having excellent shear strength.SOLUTION: In one embodiment, a terminal structure 10 for an electronic device 100 includes a copper layer 11 and a solder layer 12 which is laminated on the surface of the copper layer 11 and contains tin. The solder layer 12 includes a CuSn alloy phase 13 containing copper and tin, and a PdSn alloy phase 14 containing palladium and tin. The CuSn alloy phase 13 covers the copper layer 11 on the interface between the copper layer 11 and the solder layer 12. The PdSn alloy phase 14 is in contact with the CuSn alloy phase 13. In a cross-section substantially parallel to the lamination direction of the copper layer 11 and the solder layer 12, the wire coating ratio of the PdSn alloy phase 14 with respect to the CuSn alloy phase 13 is 10% or more. |
