| 摘要 |
<p>The present invention provides a semiconductor device suitable for miniaturization which includes a semiconductor layer of an island shape which is located on an insulation surface, first and second electrodes which are installed on the semiconductor layer and separated from each other, a gate electrode which is located on the semiconductor layer, and a gate insulation layer which is located between the semiconductor layer and the gate electrode. The first electrode and the second electrode have a first conductive layer and a second conductive layer. On the island-shaped semiconductor layer, the second conductive layer is located between the first conductive layers on the semiconductor layer of the island shape and a part of the side of the second conductive layer is in contact with a part of the side of the first conductive layer. The second conductive layer is thinner than the first conductive layer. The upper side of the second conductive layer is lower than the upper side of the first conductive layer.</p> |
