METHOD OF PRODUCING FERROELECTRIC THIN FILM-FORMING COMPOSITION AND APPLICATION OF THE SAME

摘要

A method for manufacturing a ferroelectric thin film-forming composition is a method for manufacturing a PZT thin film-forming composition which ages a PZT thin film-forming composition precursor at a temperature of 0 to 10 degrees centigrade for at least 30 days. Wherein, the PZT thin film-forming composition precursor is obtained by allowing a composition precursor material which contains the PZT precursor substance at a concentration of 23 to 38 mass% in terms of oxide in 100 mass% of the composition precursor materials to react to a high molecular compound.