| 摘要 |
PROBLEM TO BE SOLVED: To provide a nonvolatile memory cell and a nonvolatile memory which do not require a selection transistor, need only small occupied area, and include a bipolar resistance element such as MTJ element.SOLUTION: A nonvolatile memory cell comprises: a resistance change element R in which an ohmic value changes in different directions depending on an energization direction; and a bidirectional threshold element causing current with the same polarity as a voltage to flow therethrough when the voltage of an absolute value equal to or higher than a threshold voltage is applied. The resistance change element R and the bidirectional threshold element are connected in series between a bit line BL and a source line SL. The threshold element includes antiparallel-connected diodes D1 and D2. |
