| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting element that allows obtaining a high-linearity radiation output corresponding to fluctuations in current density while suppressing reduction in light-emitting efficiency corresponding to an increase in the current density of the semiconductor light-emitting element, and allows obtaining a high radiation output even when the current density is increased.SOLUTION: A semiconductor light-emitting device composed of at least an n-type semiconductor layer, a light-emitting layer, and a p-type semiconductor layer includes: a P-type AlGaN layer, which is the p-type semiconductor layer on the light-emitting layer, having a magnesium (Mg) concentration of 1.0×10to 6.0×10atoms/cm; a first p-type GaN layer having a higher concentration of Mg than the p-type AlGaN layer on the p-type AlGaN layer; and a second p-type GaN layer having a similar extent of Mg as the p-type AlGaN layer on the first p-type GaN layer. |
