SINGLE CRYSTAL 4H-SiC SUBSTRATE AND PRODUCTION METHOD THEREOF

摘要

PROBLEM TO BE SOLVED: To provide a single crystal 4H-SiC substrate and a production method thereof capable of reducing crystal defects.SOLUTION: A 4H-SiC bulk single crystal substrate 1 having flatness is prepared. A single crystal 4H-SiC layer 3 having a recessed part 2 is epitaxially grown on the 4H-SiC bulk single crystal substrate 1. When the film thickness of the single crystal 4H-SiC layer 3 is expressed as X[μm], the diameter Y[μm] of the recessed part 2 is 0.2×X[μm] or more and 2×X[μm] or less, and the depth Z[nm] of the recessed part 2 is 0.95×X[μm]+0.5[nm] or more and 10×X[μm] or less.