发明名称 PLASMA CVD APPARATUS, MANUFACTURING METHOD OF FUNCTIONAL FILM, AND FUNCTIONAL FILM
摘要 <p>PROBLEM TO BE SOLVED: To provide a plasma CVD apparatus which can manufacture a high-quality functional film by suppressing gas releasing into a space in a chamber, which is other than a facing space formed by two electrodes regardless of pressure in the chamber.SOLUTION: A plasma CVD apparatus 1 includes: a chamber 10; a first electrode roll 105 and a second electrode roll 106 which are provided in the chamber 10 and are wound with a substrate 120; a gas supply part 130 which supplies source gas toward a facing space 121 between the first electrode roll 105 and the second electrode roll 106; and a gas exhaust part 141 detachable to the chamber, which is provided across the gas supply part 130 and the facing space 121 in the gravitational direction, and has an opening part 145 wider than at least the facing space 121.</p>
申请公布号 JP2014189891(A) 申请公布日期 2014.10.06
申请号 JP20130069237 申请日期 2013.03.28
申请人 KONICA MINOLTA INC 发明人 MAEHARA YUICHIRO;SUZUKI KAZUO
分类号 C23C16/44;C23C16/42;C23C16/50 主分类号 C23C16/44
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