| 摘要 |
PROBLEM TO BE SOLVED: To provide a film forming device in which deposition of a raw material gas onto a surface of a gas injector is suppressed when the raw material gas is supplied from the gas injector to a substrate revolving on a turntable.SOLUTION: In a film forming device, when Hf-based gas as a raw material gas is discharged from a first processing gas nozzle 31 to a wafer W side, flow regulating members 81a, 81b with refrigerant flow passages 87 disposed around are arranged on both right and left sides of the first processing gas nozzle 31, respectively. Then, a refrigerant having a temperature higher than a liquefaction temperature of the raw material gas and lower than a thermal decomposition temperature of the raw material gas is flowed through the refrigerant flow passage 87. The first processing gas nozzle 31 is cooled via the flow regulating members 81a, 81b. |
