| 摘要 |
PROBLEM TO BE SOLVED: To provide an etching method, with which it is possible to obtain excellent trench and via shapes where damage amounts of a trench and a via side wall formed in a low dielectric constant insulation film are small.SOLUTION: In a method of etching, through a hard mask layer by using an etching gas, a low dielectric constant insulation film formed at an upper part of a stopper layer, an etching gas is used which contains a compound expressed by Formula (1): CxHyClz (where x represents 1 to 3, y represents 2x+2-z or less, z represents 4-x or less). This makes it possible to obtain excellent trench and via shapes where an etching amount of the stopper layer is small and damage amounts of a trench and a via side wall formed in the low dielectric constant insulation film are small. |
