| 摘要 |
PROBLEM TO BE SOLVED: To suppress the occurrence of displacement and a defect at a boundary face between a Ge optical function element and a waveguide, and to improve the characteristic and reliability of each Ge optical function element pertaining to an Si optical integrated circuit device and a manufacturing method therefor.SOLUTION: A first p-type Si layer and a second p-type Si layer separated by an i-type Si layer are provided in an i-type single crystal Si layer on a substrate surface; a first optical function element part including a Ge layer is formed on top of the first p-type Si layer using it as a contact layer; a second optical function element part including the Ge layer is formed on top of the second p-type Si layer using it as a contact layer; and the first optical function element part and the second optical function element part are connected together with a connection waveguide part comprising an i-type Ge layer. |
