| 摘要 |
PROBLEM TO BE SOLVED: To provide a junction structure for an electronic device excellent in resistance to a dynamical shock.SOLUTION: A junction structure 10 for an electronic device 100 includes: a conductive layer (nickel layer 2); and a solder layer 12A containing tin, laminated on a surface of the conductive layer 2. The solder layer 12A contains a PdSn alloy phase 6a. When an occupancy of a cross sectional area of the PdSn alloy phase 6a at a center part of a cross section of the solder layer 12A roughly perpendicular to a lamination direction of the conductive layer 2 and the solder layer 12A is defined as Oc, and when an occupancy of a cross sectional area of the PdSn alloy phase 6a at a peripheral part surrounding the center part at the cross section is defined as Om, Oc is taller than Om. |
