发明名称 CHARGED PARTICLE BEAM LITHOGRAPHY DEVICE
摘要 <p>PROBLEM TO BE SOLVED: To provide an electron beam lithography device capable of performing highly accurate drawing.SOLUTION: An electron beam lithography device 10 includes: a first deflector 28 and a second deflector 27 that each deflect an electron beam 14 emitted from an electron beam generation part 17 to a desired position; a cylindrical dielectric body 29 surrounding the deflectors 28 and 27; a plurality of wirings 30; and a plurality of first ground conductors 31. The first deflector 28 is constructed by arranging a plurality of first electrodes 28a in a ring manner. The second deflector 27 is constructed by arranging a plurality of second electrodes 27a, each of which corresponds to one of the first electrodes 28a, in a ring manner, and deflects the electron beam 14 deflected by the first deflector 28. The plurality of wirings 30 are patterned on an outer peripheral surface of the dielectric body 29 so as to have predetermined gaps therebetween, and electrically connect the first electrodes 28a and their corresponding ones of the second electrodes 27a to each other. The plurality of first ground conductors 31 are patterned in respective gaps so as to have predetermined distances from their corresponding ones of the plurality of wirings 30.</p>
申请公布号 JP2014192511(A) 申请公布日期 2014.10.06
申请号 JP20130069686 申请日期 2013.03.28
申请人 NUFLARE TECHNOLOGY INC 发明人 TANAKA HIDEKI
分类号 H01L21/027;G03F7/20;H01J37/305 主分类号 H01L21/027
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