| 摘要 |
PROBLEM TO BE SOLVED: To provide a silicon single crystal production apparatus capable of producing a silicon single crystal having a uniform oxygen deposit (BMD) and uniform gettering capacity, and a silicon single crystal production method using the same.SOLUTION: A silicon single crystal production apparatus pulling up a CZ silicon single crystal has a ring-shaped heat shield 19 arranged at a raw material melt surface 3' side of a gas flow straightening cylinder 17. The ring-shaped heat shield 19 has a bottom face 20 tilting upward along the radial direction, the bottom face 20 including an inner periphery slope 21 at the enclosing silicon single crystal side, and an outer periphery slope 22. The inner periphery slope 21 has a tilt angle α of 0° or more and 30° or less to the horizontal direction, while the outer periphery slope 22 has a tilt angle &bgr; of more than 5° and 40° or less to the horizontal direction, wherein the tilt angle α is smaller than the tilt angle &bgr;. A lower heat insulation plate is arranged below a quartz crucible 5. |
