| 摘要 |
<p>PROBLEM TO BE SOLVED: To enhance the reliability of a nonvolatile semiconductor storage device.SOLUTION: A nonvolatile semiconductor storage device comprises: a laminate which includes a plurality of electrode layers provided on a ground layer and a plurality of insulating layers, respectively; a first interlayer insulating film on the laminate; a selection gate electrode on the first interlayer insulating film; a second interlayer insulating film on the selection gate electrode; a pair of semiconductor layers extending from th upper end of the second interlayer insulating film to the lower end of the laminate; a first insulating film provided between the pair of semiconductor layers, respectively, and between the plurality of electrode layers, respectively; a second insulating film provided between the semiconductor layer and the selection gate electrode; a first contact electrode connected to the upper end of one of the pair of semiconductor layers, and extending in the lamination direction of the laminate; a second contact electrode connected to the upper end of the other of the pair of semiconductor layers, and extending in the lamination direction of the laminate; a third contact electrode connected to the second contact and extending in the lamination direction; a first wiring layer connected with the first contact electrode; and a second wiring layer connected with the third contact electrode.</p> |
