| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a semiconductor storage device having contacts for control electrodes provided on lateral faces of a charge storage layer; and provide a manufacturing method of the semiconductor device.SOLUTION: According to an embodiment, a semiconductor device comprises: a plurality of first charge storage layers which are provided on a first gate insulation film and separated from each other in a first direction and a second direction; a plurality of second charge storage layers which are provided on an insulation film and separated from each other in the first direction and the second direction; intermediate insulation films provided on lateral faces of the first charge storage layers and lateral faces of the second charge storage layers; and control electrodes which are provided on lateral faces of the intermediate insulation films and extend in the second direction, and each includes a lateral face part opposite to a lateral face of the first charge storage layer and a lateral face of the second charge storage layer across the intermediate insulation film, and a pad part which is integrally provided under the lateral face part and has a width larger than a film thickness of the lateral face part.</p> |
