| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a semiconductor memory device capable of shortening the time for reading flag data.SOLUTION: A first memory cell stores first data. A second memory cell stores second data indicating the write state of the first data. A word line is electrically connected to a gate of the first memory cell and a gate of the second memory cell. A first bit line reads the first data from the first memory cell. A second bit line reads the second data from the second memory cell. A first sense amplifier reads the first data from the first memory cell via the first bit line. A second sense amplifier reads the second data from the second memory cell via the second bit line. An accumulator temporarily stores the first data and second data. A first bus line transfers the first data from the first sense amplifier to the accumulator. A second bus line transfers the second data from the second sense amplifier to the accumulator.</p> |
