发明名称 MAGNETIC SENSOR WITH REDUCED EFFECT OF INTERLAYER COUPLING MAGNETIC FIELD
摘要 A magnetic sensor includes an MR element and a bias field generation unit. The MR element includes a magnetization pinned layer having a magnetization pinned in a direction parallel to an X direction, a free layer having a magnetization that varies depending on an X-direction component of an external magnetic field, and a nonmagnetic layer interposed between the magnetization pinned layer and the free layer. The magnetization pinned layer, the nonmagnetic layer and the free layer are stacked to be adjacent in a Y direction. The free layer receives an interlayer coupling magnetic field in a direction parallel to the X direction resulting from the magnetization pinned layer. The bias field generation unit applies a bias magnetic field to the free layer. The bias magnetic field includes a first component in a direction opposite to that of the interlayer coupling magnetic field and a second component in a Z direction.
申请公布号 US2014292322(A1) 申请公布日期 2014.10.02
申请号 US201414189211 申请日期 2014.02.25
申请人 TDK CORPORATION 发明人 YAMAZAKI Hiroshi;MIZOGUCHI Yoshiyuki;ABE Satoshi;TOKIDA Homare;AYUKAWA Toshiyuki
分类号 G01R33/09 主分类号 G01R33/09
代理机构 代理人
主权项 1. A magnetic sensor configured to detect a component in a first direction of an external magnetic field, comprising a magnetoresistive element and a bias field generation unit, wherein the magnetoresistive element includes a magnetization pinned layer having a magnetization pinned in a direction parallel to the first direction, a free layer having a magnetization that varies depending on the component in the first direction of the external magnetic field, and a nonmagnetic layer interposed between the magnetization pinned layer and the free layer, the magnetization pinned layer, the nonmagnetic layer and the free layer are stacked to be adjacent in a second direction orthogonal to the first direction, the free layer receives an interlayer coupling magnetic field in the direction parallel to the first direction resulting from the magnetization pinned layer, the bias field generation unit applies a bias magnetic field to the free layer, and the bias magnetic field includes a first magnetic field component in a direction opposite to the direction of the interlayer coupling magnetic field and a second magnetic field component in a third direction orthogonal to the first and second directions.
地址 Tokyo JP