| 摘要 |
Provided is a silicon-based electro-optical modulation device which is capable of operating at high speed, and with which a reduction in size can be achieved. A first silicon semiconductor layer (120) doped so as to exhibit a first conductivity type, and a second silicon semiconductor layer (160) doped so as to exhibit a second conductivity type are stacked such that at least portions thereof overlap each other. A comparatively thin dielectric body (150) is formed at an interface where the second silicon semiconductor layer (160) is stacked upon the first silicon semiconductor layer (120). The first silicon semiconductor layer (120) has a rib waveguide shape (130) provided with a rib part (131), and slab parts (132, 132). First highly-concentration doped areas (140, 140) doped with high concentration are provided in positions adjacent to the slab parts (132, 132) in the first silicon semiconductor layer (120). The first high-concentration doped areas (140, 140) have a height equal to that of the rib part (131) of the rib waveguide (130). |
