A microelectromechanical system (MEMS) device includes a high density getter. The high density getter includes a silicon surface area formed by porosification or by the formation of trenches within a sealed cavity of the device. The silicon surface area includes a deposition of titanium or other gettering material to reduce the amount of gas present in the sealed chamber such that a low pressure chamber is formed. The high density getter is used in bolometers and gyroscopes but is not limited to those devices.
申请公布号
WO2014159946(A1)
申请公布日期
2014.10.02
申请号
WO2014US25498
申请日期
2014.03.13
申请人
ROBERT BOSCH GMBH;SAMARAO, ASHWIN;O'BRIEN, GARY;FEYH, ANDO;YAMA, GARY;GRAHAM, ANDREW;KIM, BONGSANG;PURKL, FABIAN