DETERMINING READ VOLTAGES FOR READING MEMORY

摘要

A method of reading data at a data storage device that includes a non-volatile memory includes identifying a first set of storage elements of a first word line of the non-volatile memory that satisfy a condition. The condition is based on one or more states of one or more storage elements. The method includes determining a first read voltage corresponding to the first set of storage elements of the first word line and determining a second read voltage corresponding to a second set of storage elements of the first word line that do not satisfy the condition. The method includes reading data from the first word line by applying the first read voltage to the first set of storage elements of the first word line and applying the second read voltage to the second set of storage elements of the first word line.