| 摘要 |
CBRAM or ReRAM type resistive memory cells are proposed, including a top electrode (106), a bottom electrode (102) having an elongated trench shape defining a pair of spaced-apart bottom electrode sidewalls (110A, HOB), and an electrolyte switching region (104) arranged to provide a path for the formation of a conductive filament or vacancy chain (114) from the upper surface (116) of the bottom electrode sidewall to the top electrode when a voltage is applied to the cell. In addition, memory devices may include a two-dimensional array of such resistive memory cells. |
