发明名称 |
METAL OXIDE SEMICONDUCTOR (MOS) ISOLATION SCHEMES WITH CONTINUOUS ACTIVE AREAS SEPARATED BY DUMMY GATES AND RELATED METHODS |
摘要 |
<p>Embodiments disclosed in the detailed description include metal oxide semiconductor (MOS) isolation schemes with continuous active areas separated by dummy gates. A MOS device includes an active area formed from a material with a work function that is described as either an n-metal or a p-metal. Active components are formed on this active area using materials having a similar work function. Isolation is effectuated by positioning a dummy gate between the active components. The dummy gate is made from a material having an opposite work function relative to the material of the active area. For example, if the active area was a p-metal material, the dummy gate would be made from an n-metal, and vice versa.</p> |
申请公布号 |
WO2014159160(A1) |
申请公布日期 |
2014.10.02 |
申请号 |
WO2014US22263 |
申请日期 |
2014.03.10 |
申请人 |
QUALCOMM INCORPORATED |
发明人 |
YANG, BIN;LI, XIA;CHIDAMBARAM, PR |
分类号 |
H01L21/8238;H01L21/765;H01L27/02 |
主分类号 |
H01L21/8238 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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