发明名称 |
STORAGE DEVICE WITH SELF-CONTAINED INFORMATION STORAGE SPACE |
摘要 |
A storage device with self-contained information storage space includes at least a type-I non-volatile memory and a type-II non-volatile memory which form a data storage region and an information storage region, respectively. The type-II non-volatile memory has higher endurance than the type-I non-volatile memory. The type-I and type-II non-volatile memory are connected to a controller through a parallel interface and a series interface, respectively. The storage device uses the high-storage-density type-I non-volatile memory to meet high-capacity storage space requirement and uses the high-endurance type-II non-volatile memory to store important information and therefore ensure system stability, thereby solving problems facing existing storage devices—information stored in high-storage-density memory gets damaged easily because of an increase in programming/erase (P/E) cycles thereof. |
申请公布号 |
US2014297925(A1) |
申请公布日期 |
2014.10.02 |
申请号 |
US201314145615 |
申请日期 |
2013.12.31 |
申请人 |
SK hynix Inc. |
发明人 |
WEI Chin Fan |
分类号 |
G06F12/02 |
主分类号 |
G06F12/02 |
代理机构 |
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代理人 |
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主权项 |
1. A storage device with self-contained information storage space, comprising:
at least a type-I non-volatile memory having high storage density and forming a data storage region for storing data; a type-II non-volatile memory forming an information storage region to store information except data, being formed from non-volatile memory except the type-I non-volatile memory, and having higher endurance than the type-I non-volatile memory; a controller connected to the type-I non-volatile memory through a parallel interface and connected to the type-II non-volatile memory through a series interface; anda communication interface port connected to the controller. |
地址 |
Icheon-si Gyeonggi-do KR |