| 发明名称 |
METHOD FOR FORMING SEMICONDUCTOR GATE STRUCTURE AND SEMICONDUCTOR GATE STRUCTURE |
| 摘要 |
A method for forming a semiconductor gate structure and a semiconductor gate structure are provided. The method includes: providing a substrate with a Ge layer as a surface thereof; forming a Sn layer on the Ge layer, in which an interface between the Ge layer and the Sn layer is a GeSn layer; removing the Sn layer to expose the GeSn layer; forming a GeSnOx passivation layer by performing an oxidation treatment for the GeSn layer, or forming a GeSnN or GeSnON passivation layer by performing a passivation treatment for the GeSn layer; and forming a gate stack on the GeSnOx, GeSnN or GeSnON passivation layer. |
| 申请公布号 |
US2014291727(A1) |
申请公布日期 |
2014.10.02 |
| 申请号 |
US201313980803 |
申请日期 |
2013.06.14 |
| 申请人 |
Tsinghua University |
发明人 |
Zhao Mei;Liang Renrong;Wang Jing;Xu Jun |
| 分类号 |
H01L21/316;H01L29/40;H01L29/423;H01L21/28;H01L29/78 |
主分类号 |
H01L21/316 |
| 代理机构 |
|
代理人 |
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| 主权项 |
1. A method for forming a semiconductor gate structure, comprising:
providing a substrate with a Ge layer as a surface thereof; forming a Sn layer on the Ge layer, wherein an interface between the Ge layer and the Sn layer is a GeSn layer; removing the Sn layer to expose the GeSn layer; forming a GeSnOx passivation layer by performing an oxidation treatment for the GeSn layer, or forming a GeSnN or GeSnON passivation layer by performing a passivation treatment for the GeSn layer; and forming a gate stack on the GeSnOx, GeSnN or GeSnON passivation layer. |
| 地址 |
Beijing CN |
