发明名称 |
SIC SINGLE CRYSTAL, SIC WAFER, AND SEMICONDUCTOR DEVICE |
摘要 |
An SiC single crystal includes a low dislocation density region (A) where the density of dislocations each of which has a Burgers vector in a {0001} in-plane direction (mainly a direction parallel to a <11-20> direction) is not more than 3,700 cm/cm3. Such an SiC single crystal is obtained by: cutting out a c-plane growth seed crystal of a high offset angle from an a-plane grown crystal; applying c-plane growth so that the density of screw dislocations introduced into a c-plane facet may fall in a prescribed range; cutting out a c-plane growth crystal of a low offset angle from the obtained c-plane grown crystal; and applying c-plane growth so that the density of screw dislocations introduced into a c-plane facet may fall in a prescribed range. An SiC wafer and a semiconductor device are obtained from such an SiC single crystal. |
申请公布号 |
US2014291700(A1) |
申请公布日期 |
2014.10.02 |
申请号 |
US201214353710 |
申请日期 |
2012.12.03 |
申请人 |
KABUSHIKI KAISHA TOYOTA CHUO KENKYUSHO ;DENSO CORPORATION ;TOYOTA JIDOSHA KABUSHIKI KAISHA |
发明人 |
Gunjishima Itaru;Urakami Yasushi;Adachi Ayumu |
分类号 |
H01L29/04;C30B29/36;H01L29/16 |
主分类号 |
H01L29/04 |
代理机构 |
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代理人 |
|
主权项 |
1. An SiC single crystal comprising a low dislocation density region (A) where the volume density of dislocations each of which has a Burgers vector in a {0001} in-plane direction is not more than 3,700 cm/cm3. |
地址 |
Nagakute-shi, Aichi-ken JP |