| 摘要 |
A method for manufacturing an insulated gate bipolar transistor (10), which comprises a drift layer (3) of a first conductivity type between an emitter side (65), at which a gate electrode (7) and an emitter electrode (8) are arranged, and a collector side (45) opposite to the emitter side (65), at which a collector electrode (9) is arranged, is provided. The manufacturing method comprises manufacturing steps in the following order: - proving a substrate (1) of a second conductivity type, which is opposite to the first conductivity type, having a first and a second side (12, 14) opposite to the first side, - creating a first layer (25) of the first conductivity type on the first side (12) by applying a dopant, - creating a drift layer (3) of the first conductivity type on the first layer (25), which has a low doping concentration, - diffusing the ions such that a buffer layer (2) having a buffer layer thickness (22) is created, wherein the buffer layer (2) has a higher doping concentration than the drift layer (3), - creating a base layer (5) of the second conductivity type on the drift layer (3), - creating an emitter layer (6) of the first conductivity type on the base layer (5), - thinning (48) the substrate (1) on the second side (14) such that the remaining part of the substrate forms a collector layer (4). |
