| 摘要 |
<p>Provided is an electron beam generation device having increased parallelism which increases throughput of an electron beam irradiation device, and having increased exposure precision. A first embodiment of the present invention provides an electron beam irradiation device that irradiates a drawing pattern by a plurality of electron beams, on to a target object and comprises: a planar electron beam source having a plurality of electron beam generation sources that output the plurality of electron beams arranged thereon; and a control unit that adjusts the electron beam output time for each of the plurality of electron beam generation sources.</p> |
