SEMICONDUCTOR DEVICE, POWER CONVERSION DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD

摘要

A semiconductor device (100, 100a-100c) comprises a conductive member (20), a semiconductor device component (10) disposed on top of the conductive member, and a bonding layer for bonding the conductive member and the semiconductor device component. When viewed in plan view, the bonding layer includes the following: a first bonding layer (16) that is disposed inward from the outer edge of the semiconductor device component; and a second bonding layer (17) that is disposed on the outer side of the first bonding layer and has smaller porosity than the first bonding layer.