发明名称 LATTICE MISMATCHED HETEROJUNCTION STRUCTURES AND DEVICES MADE THEREFROM
摘要 <p>Semiconductor heterojunction structures comprising lattice mismatched, single-crystalline semiconductor materials and methods of fabricating the heterojunction structures are provided. The heterojunction structures comprise at least one three-layer junction comprising two layers of single-crystalline semiconductor and a current tunneling layer sandwiched between and separating the two layers of single-crystalline semiconductor material. Also provided are devices incorporating the heterojunction structures, methods of making the devices and method of using the devices.</p>
申请公布号 WO2014158312(A1) 申请公布日期 2014.10.02
申请号 WO2014US11569 申请日期 2014.01.15
申请人 WISCONSIN ALUMNI RESEARCH FOUNDATION 发明人 MA, ZHENQIANG;SEO, JUNG-HUN
分类号 H01L21/20 主分类号 H01L21/20
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