发明名称 |
LATTICE MISMATCHED HETEROJUNCTION STRUCTURES AND DEVICES MADE THEREFROM |
摘要 |
<p>Semiconductor heterojunction structures comprising lattice mismatched, single-crystalline semiconductor materials and methods of fabricating the heterojunction structures are provided. The heterojunction structures comprise at least one three-layer junction comprising two layers of single-crystalline semiconductor and a current tunneling layer sandwiched between and separating the two layers of single-crystalline semiconductor material. Also provided are devices incorporating the heterojunction structures, methods of making the devices and method of using the devices.</p> |
申请公布号 |
WO2014158312(A1) |
申请公布日期 |
2014.10.02 |
申请号 |
WO2014US11569 |
申请日期 |
2014.01.15 |
申请人 |
WISCONSIN ALUMNI RESEARCH FOUNDATION |
发明人 |
MA, ZHENQIANG;SEO, JUNG-HUN |
分类号 |
H01L21/20 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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