发明名称 |
PIEZOELECTRIC THIN FILM MULTILAYER SUBSTRATE, PIEZOELECTRIC THIN FILM ELEMENT AND METHOD OF MANUFACTURING THE SAME |
摘要 |
<p>PROBLEM TO BE SOLVED: To provide a piezoelectric thin film element having a piezoelectric character equal to or higher than a conventional one, a piezoelectric thin film multilayer substrate capable of making the piezoelectric thin film element and a method of manufacturing the same.SOLUTION: A method of manufacturing a piezoelectric thin film multilayer substrate comprises: a step of forming a metal layer 3 on a heat resistant first substrate 1; a step of forming a KNN thin film layer 4 on the metal layer 3; a step of forming a first bonding/electrode layer 5 on the piezoelectric thin film layer 4; a step of forming a second bonding/electrode layer 5' on a flexible second substrate 6; a step of obtaining a composite substrate 8 in which the first substrate 1 and the second substrate 6 are integrated with each other while sandwiching the piezoelectric thin film layer 4 between them by bonding the first bonding/electrode layer 5 and the second bonding/electrode layer 5'; and a step of removing the first substrate 1 while leaving the piezoelectric thin film layer 4 on the side of the second substrate 6 by performing wet etching on the composite substrate 8.</p> |
申请公布号 |
JP2014187094(A) |
申请公布日期 |
2014.10.02 |
申请号 |
JP20130059413 |
申请日期 |
2013.03.22 |
申请人 |
HITACHI METALS LTD |
发明人 |
HORIKIRI FUMIMASA;SHIBATA KENJI;SUENAGA KAZUFUMI;WATANABE KAZUTOSHI;NOGUCHI MASAKI |
分类号 |
H01L41/312;C23C14/08;H01L41/047;H01L41/187;H01L41/316 |
主分类号 |
H01L41/312 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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