发明名称 |
VERTICAL GALLIUM NITRIDE JFET WITH GATE AND SOURCE ELECTRODES ON REGROWN GATE |
摘要 |
A semiconductor structure includes a GaN substrate with a first surface and a second surface. The GaN substrate is characterized by a first conductivity type and a first dopant concentration. A first electrode is electrically coupled to the second surface of the GaN substrate. The semiconductor structure further includes a first GaN epitaxial layer of the first conductivity type coupled to the first surface of the GaN substrate and a second GaN layer of a second conductivity type coupled to the first GaN epitaxial layer. The first GaN epitaxial layer comprises a channel region. The second GaN epitaxial layer comprises a gate region and an edge termination structure. A second electrode coupled to the gate region and a third electrode coupled to the channel region are both disposed within the edge termination structure. |
申请公布号 |
US2014291691(A1) |
申请公布日期 |
2014.10.02 |
申请号 |
US201414192662 |
申请日期 |
2014.02.27 |
申请人 |
Avogy, Inc. |
发明人 |
Disney Donald R.;Nie Hui;Kizilyalli Isik C.;Brown Richard J. |
分类号 |
H01L29/808;H01L29/66;H01L29/20 |
主分类号 |
H01L29/808 |
代理机构 |
|
代理人 |
|
主权项 |
1. (canceled) |
地址 |
San Jose CA US |