LOW-EMISSIVITY GLASS INCLUDING SPACER DIELECTRIC LAYERS COMPATIBLE WITH HEAT TREATMENT

摘要

Disclosed herein are systems, methods, and apparatus for forming low emissivity panels that may include a first spacer dielectric layer and the second spacer dielectric layer formed between a first reflective layer and a second reflective layer. The first spacer dielectric layer may include zinc tin oxide. The second spacer dielectric layer may include tin aluminum oxide. The low emissivity panel may have a Rg &Dgr;E of less than about 2.0 in response to the application of a heat treatment to the low emissivity panel. A combined thickness of the first spacer dielectric layer and the second spacer dielectric layer is between about 40 nm and 90 nm. An atomic ratio of tin to aluminum in the second spacer dielectric layer is between about 0.8 and 1.2, and an atomic ratio of zinc to tin in the first spacer dielectric layer may be between about 1.8 and 2.2.